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1

A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

Yifeng Wu, Jacob-Mitos, M., Moore, M.L., Heikman, S.

Journal:

IEEE Electron Device Letters

Year:

2008

Language:

english

File:

PDF, 422 KB

english, 2008

2

AlGaN/AlN/GaN high-power microwave HEMT

Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N.-Q., Buttari, D., Smorchkova, I.P., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 62 KB

english, 2001

3

[IEEE 2006 European Microwave Integrated Circuits Conference - Manchester, UK (2006.09.10-2006.09.13)] 2006 European Microwave Integrated Circuits Conference - Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

Gao, S., Butterworth, P., Sambell, A., Sanabria, C., Xu, H., Heikman, S., Mishra, U., York, R.

Year:

2006

Language:

english

File:

PDF, 3.99 MB

english, 2006

4

A Simple Predictive Tool for Lower Brahmaputra River Basin Monsoon Flooding

Kamal-Heikman, Shithi, Derry, Louis A., Stedinger, Jery R., Duncan, Christopher C.

Journal:

Earth Interactions

Year:

2007

Language:

english

File:

PDF, 326 KB

english, 2007

5

Differential response to right unilateral ECT in depressed patients: impact of comorbidity and severity of illness [ISRCTN39974945]

Pertti Heikman, Heikki Katila, Seppo Sarna, Kristian Wahlbeck, Kimmo Kuoppasalmi

Journal:

Year:

2002

Language:

english

File:

PDF, 285 KB

english, 2002

6

Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures

Buttari, D., Chini, A., Palacios, T., Coffie, R., Shen, L., Xing, H., Heikman, S., McCarthy, L., Chakraborty, A., Keller, S., Mishra, U. K.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 301 KB

english, 2003

7

High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates

Xing, H., Dora, Y., Chini, A., Heikman, S., Keller, S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 168 KB

english, 2004

8

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 260 KB

english, 2006

9

[IEEE 2006 European Microwave Conference - Manchester, UK (2006.09.10-2006.09.15)] 2006 European Microwave Conference - Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT

Gao, S., Butterworth, P., Sambell, A., Sanabria, C., Xu, H., Heikman, S., Mishra, U., York, R.

Year:

2006

Language:

english

File:

PDF, 3.99 MB

english, 2006

10

[IEEE 2000 IEEE MTT-S International Microwave Symposium Digest - Boston, MA, USA (11-16 June 2000)] 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017) - A 3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

Xu, J.J., Keller, S., Perish, G., Heikman, S., Mishra, U.K., York, R.A.

Year:

2000

Language:

english

File:

PDF, 285 KB

english, 2000

11

Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors

Poblenz, C., Waltereit, P., Rajan, S., Heikman, S., Mishra, U. K., Speck, J. S.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2004

Language:

english

File:

PDF, 378 KB

english, 2004

12

Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN

S. Heikman, S. Keller, B. Moran, R. Coffie, S.P. DenBaars, U.K. Mishra

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

13

Indium Surfactant Assisted Growth of AlN/GaN Heterostructures by Metal-Organic Chemical Vapor Deposition

S. Keller, S. Heikman, I. Ben-yaacov, L. Shen, S.P. DenBaars, U.K. Mishra

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 104 KB

english, 2001

14

Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation

S. Heikman, S. Keller, U.K. Mishra

Journal:

Journal of Crystal Growth

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

15

Growth and characteristics of Fe-doped GaN

S. Heikman, S. Keller, T. Mates, S.P. DenBaars, U.K. Mishra

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 96 KB

english, 2003

16

Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy

F. Bertram, J. Christen, S. Heikman, S. Keller, S. P. DenBaars, U. K. Mishra

Journal:

physica status solidi (a)

Year:

2003

Language:

english

File:

PDF, 532 KB

english, 2003

17

Demonstration of a GaN-spacer high electron mobility transistor with low alloy scattering

T. Palacios, L. Shen, S. Keller, A. Chakraborty, S. Heikman, D. Buttari, S. P. DenBaars, U. K. Mishra

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 89 KB

english, 2005

18

Oxygen doping of c-plane GaN by metalorganic chemical vapor deposition

Sten Heikman, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 105 KB

english, 2003

19

Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

Debdeep Jena, S. Heikman, J. S. Speck, U. K. Mishra, A. Link, O. Ambacher

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 284 KB

english, 2003

20

Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, A. Chini, S. Keller, S. P. Denbaars, U. K. Mishra

Journal:

Journal of Electronic Materials

Year:

2004

Language:

english

File:

PDF, 252 KB

english, 2004

21

Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures

Keller, S., Parish, G., Fini, P. T., Heikman, S., Chen, C.-H., Zhang, N., DenBaars, S. P., Mishra, U. K., Wu, Y.-F.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 646 KB

english, 1999

22

Effect of ohmic contacts on buffer leakage of GaN transistors

Dora, Y., Chakraborty, A., Heikman, S., McCarthy, L., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2006

Language:

english

File:

PDF, 283 KB

english, 2006

23

Biodistribution and radiation dosimetry of [123I]ADAM in healthy human subjects: preliminary results

Kauppinen, Tomi, Bergstr&#x000F6, m, Kim, Heikman, Pertti, Hiltunen, Jukka, Ahonen, Aapo

Journal:

European Journal of Nuclear Medicine and Molecular Imaging

Year:

2003

Language:

english

File:

PDF, 180 KB

english, 2003

24

MMIC class-F power amplifiers using field-plated GaN HEMTs

Gao, S., Sanabria, C., Xu, H., Long, S.I., Heikman, S., Mishra, U., York, R.A.

Journal:

IEE Proceedings - Microwaves Antennas and Propagation

Year:

2006

Language:

english

File:

PDF, 895 KB

english, 2006

25

A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier

Xu, J.J., Keller, S., Parish, G., Heikman, S., Mishra, U.K., York, R.A.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2000

Language:

english

File:

PDF, 421 KB

english, 2000

26

Influence of the dynamic access resistance in the gm and fT linearity of AlGaN/GaN HEMTs

Palacios, T., Rajan, S., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 653 KB

english, 2005

27

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

Palacios, T., Chini, A., Buttari, D., Heikman, S., Chakraborty, A., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 207 KB

english, 2006

28

Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs

Sanabria, C., Hongtao Xu, Palacios, T., Chakraborty, A., Heikman, S., Mishra, U.K., York, R.A.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2005

Language:

english

File:

PDF, 961 KB

english, 2005

29

[IEEE 2008 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS) - Monterey, CA, USA (2008.10.12-2008.10.15)] 2008 IEEE Compound Semiconductor Integrated Circuits Symposium - AlGaN/GaN-on-SiC HEMT Technology Status

Smith, R. Peter, Sheppard, S., Wu, Y.-F., Heikman, S., Wood, S., Pribble, W., Milligan, J. W.

Year:

2008

Language:

english

File:

PDF, 435 KB

english, 2008

30

[IEEE IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - Palm Springs, CA, USA (2005.11.2-2005.11.2)] IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. - High-efficiency class-E power amplifier using field-plated GaN HEMTs

Xu, H., Gao, S., Heikman, S., Mishra, U.K., York, R.A.

Year:

2005

Language:

english

File:

PDF, 435 KB

english, 2005

31

Blood concentrations of vasopressin, neuropeptide FF and prolactin are increased by high-dose right unilateral ECT

D.M Sundblom, P Heikman, H Naukkarinen, F Fyhrquist

Journal:

Year:

1999

Language:

english

File:

PDF, 114 KB

english, 1999

32

High breakdown GaN HEMT with overlapping gate structure

Zhang, N.-Q., Keller, S., Parish, G., Heikman, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2000

Language:

english

File:

PDF, 78 KB

english, 2000

33

Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN

Jena, Debdeep, Heikman, Sten, Speck, James S., Gossard, Arthur, Mishra, Umesh K., Link, Angela, Ambacher, Oliver

Journal:

Physical Review B

Year:

2003

Language:

english

File:

PDF, 367 KB

english, 2003

34

1 - 8-GHz GaN-based power amplifier using flip-chip bonding

Xu, J.J., Yi-Feng Wu, Keller, S., Heikman, S., Thibeault, B.J., Mishra, U.K., York, R.A.

Journal:

IEEE Microwave and Guided Wave Letters

Year:

1999

Language:

english

File:

PDF, 197 KB

english, 1999

35

[IEEE IEEE Lester Eastmann Biennial Conference - Newark, DE, USA (6-8 Aug. 2002)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices - Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs

Buttari, D., Heikman, S., Keller, S., Mishra, U.K.

Year:

2002

Language:

english

File:

PDF, 714 KB

english, 2002

36

Two-stage quasi-class-E power amplifier in GaN HEMT technology

Gao, S., Hongtao Xu,, Heikman, S., Mishra, U.K., York, R.A.

Journal:

IEEE Microwave and Wireless Components Letters

Year:

2006

Language:

english

File:

PDF, 322 KB

english, 2006

37

AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy

Smorchkova, I. P., Chen, L., Mates, T., Shen, L., Heikman, S., Moran, B., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 453 KB

english, 2001

38

[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - High-voltage Millimeter-Wave GaN HEMTs with 13.7 W/mm Power Density

Wu, Y.-F., Moore, M., Abrahamsen, A., Jacob-Mitos, M., Parikh, P., Heikman, S., Burk, A.

Year:

2007

Language:

english

File:

PDF, 1.96 MB

english, 2007

39

High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

Paidi, V., Shouxuan Xie,, Coffie, R., Moran, B., Heikman, S., Keller, S., Chini, A., DenBaars, S.P., Mishra, U.K., Long, S., Rodwell, M.J.W.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2003

Language:

english

File:

PDF, 723 KB

english, 2003

40

Parenteral buprenorphine–naloxone abuse is a major cause of fatal buprenorphine-related poisoning

Häkkinen, Margareeta, Heikman, Pertti, Ojanperä, Ilkka

Journal:

Forensic Science International

Year:

2013

Language:

english

File:

PDF, 522 KB

english, 2013

41

[IEEE IEEE Lester Eastman Conference on High Performance Devices, 2004. - Rensselaer Polytechnic Inst., Troy, NY, USA (4-6 Aug., 2004)] Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2004. - A new field-plated GaN HEMT structure with improved power and noise performance

Hongtao Xu,, Sanabria, C., Chini, A., Yun Wei,, Heikman, S., Keller, S., Mishra, U.K., York, R.A.

Year:

2004

Language:

english

File:

PDF, 804 KB

english, 2004

42

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Moran, B., Heikman, S., Zhang, N.Q., Shen, L., Coffie, R., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 64 KB

english, 2002

43

Gallium nitride based transistors

Xing, H, Keller, S, Wu, Y-F, McCarthy, L, Smorchkova, I P, Buttari, D, Coffie, R, Green, D S, Parish, G, Heikman, S, Shen, L, Zhang, N, Xu, J J, Keller, B P, DenBaars, S P, Mishra, U K

Journal:

Journal of Physics Condensed Matter

Year:

2001

Language:

english

File:

PDF, 472 KB

english, 2001

44

Urine naloxone concentration at different phases of buprenorphine maintenance treatment

Heikman, Pertti, Häkkinen, Margareeta, Gergov, Merja, Ojanperä, Ilkka

Journal:

Drug Testing and Analysis

Year:

2014

Language:

english

File:

PDF, 353 KB

english, 2014

45

[IEEE 2005 Asia-Pacific Microwave - Suzhou, China (04-07 Dec. 2005)] 2005 Asia-Pacific Microwave Conference Proceedings - Microwave Class-E GaN Power Amplifiers

Gao, S., Xu, H., Heikman, S., Mishra, U., York, R.A.

Year:

2005

Language:

english

File:

PDF, 288 KB

english, 2005

46

[IEEE Device Research Conference - Santa Barbara, CA, USA (24-26 June 2002)] 60th DRC. Conference Digest Device Research Conference - P-GaN/AlGaN/GaN high electron mobility transistors

Coffie, R., Heikman, S., Buttari, D., Keller, S., Chini, A., Shen, L., Zhang, N., Jimenez, A., Jena, D., Mishra, U.K.

Year:

2002

Language:

english

File:

PDF, 102 KB

english, 2002

47

[IEEE 63rd Device Research Conference Digest, 2005. DRC '05. - Santa Barbara, CA, USA (June 20-22, 2005)] 63rd Device Research Conference Digest, 2005. DRC '05. - Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs

Dora, Y., Suh, C., Chakraborty, A., Heikman, S., Chandrasekarana, S., Mehrotra, V., Mishra, U.K.

Year:

2005

Language:

english

File:

PDF, 901 KB

english, 2005

48

[IEEE Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Notre Dame, IN, USA (June 21-23, 2004)] Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. - Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

Chini, A., Buttari, D., Coffie, R., Shen, L., Palacios, T., Heikman, S., Chakraborty, A., Keller, S., Mishra, U.K.

Year:

2004

Language:

english

File:

PDF, 148 KB

english, 2004

49

High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation

Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 134 KB

english, 2004

50

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

S. Heikman, S. Keller, S. P. Denbaars, U. K. Mishra

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 433 KB

english, 2002